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DISCRETE SEMICONDUCTORS
DATA SHEET
BZX79 series
Voltage regulator diodes
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
FEATURES
• Total power dissipation: max. 500 mW• Two tolerance series: ±2%, and approx. ±5%• Working voltage range: nom. 2.4 to 75 V (E24 range)• Non-repetitive peak reverse power dissipation: APPLICATIONS
• Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±2% (BZX79-B) and approx. ±5% (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
PARAMETER
CONDITIONS
Device mounted on a printed circuit-board without metallization pad; lead length max.
Tie-point temperature ≤ 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
Tj = 25 °C unless otherwise specified.
PARAMETER
CONDITIONS
PARAMETER
CONDITIONS
Per type, BZX79-B/C2V4 to BZX79-B/C24
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
DIFFERENTIAL RESISTANCE
TEMP. COEFF.
DIODE CAP.
NON-REPETITIVE PEAK
rdif (Ω)
SZ (mV/K)
REVERSE CURRENT
at IZtest = 5 mA
at IZtest = 5 mA
at f = 1 MHz;
at tp = 100 μs; Tamb = 25 °C
Tol. approx.
Tol. ±2% (B)
Ztest = 1 mA
at IZtest = 5 mA
Per type, BZX79-B/C27 to BZX79-B/C75
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
DIFFERENTIAL RESISTANCE
TEMP. COEFF.
DIODE CAP.
NON-REPETITIVE PEAK
rdif (Ω)
SZ (mV/K)
REVERSE CURRENT
at IZtest = 2 mA
at IZtest = 2 mA
at f = 1 MHz;
at tp = 100 μs; Tamb = 25 °C
Tol. approx.
Tol. ±2% (B)
Ztest = 0.5 mA
at IZtest = 2 mA
THERMAL CHARACTERISTICS
PARAMETER
CONDITIONS
thermal resistance from junction to tie-point lead length 8 mm.
thermal resistance from junction to ambient lead length max.; see and note Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
(1) Tj = 25 °C (prior to surge).
(2) T Typical forward current as a function of reverse power dissipation versus duration.
BZX79-B/C2V4 to BZX79-B/C4V3.
BZX79-B/C4V7 to BZX79-B/C12.
Temperature coefficient as a function of Temperature coefficient as a function of PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
DIMENSIONS (mm are the original dimensions)
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
ISSUE DATE
PROJECTION
DATA SHEET STATUS
DOCUMENT
DEFINITION
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS
above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be
extended periods may affect device reliability.
accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale
expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
Suitability for use ⎯ NXP Semiconductors products are
may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights.
of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s)
property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for
Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
NXP Semiconductors
Customer notification
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Source: http://www.sos.sk/a_info/resource/c/nxp/BZX79B3V6.pdf

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